n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 3 0 5 5 n g apm3055n handling code temp. range package code package code g : to-263 operating junction temp. range c : -55 to 150 c handling code tu : tube tr : tape & reel lead free code l : lead free device apm3055n g: apm3055n xxxxx xxxxx - date code lead free code p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s 3 0 v / 1 2 a , r d s ( o n ) = 7 5 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 1 0 0 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f t o - 2 6 3 n - c h a n n e l m o s f e t n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . s d g p o w e r m a n a g e m e n t i n d e s k t o p c o m p u t e r o r d c / d c c o n v e r t e r s g d s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 2 a p m 3 0 5 5 n g a b s o l u t e m a x i m u m r a t i n g s symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 20 v t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c i s diode continuous forward cu rrent t c =25 c 8 a mounted on large heat sink t c =25 c 48 i d p 300 s pulse drain current tested t c =100 c 48 t c =25 c 12 * i d continuous drain current t c =100 c 12 a t c =25 c 62.5 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 2 c /w mounted on pcb of 1in 2 pad a rea t a =25 c 16 i d p 300 s pulse drain current tested t a =100 c 10 t a = 25 c 4.3 i d continuous drain current t a = 100 c 3.1 a t a = 25 c 2.8 p d maximum power dissipation t a = 100 c 1.1 w r q ja thermal resistance - junction to ambient 45 c /w mounted on pcb of minimum footprint t a =25 c 14 i d p 300 s pulse drain current tested t a =100 c 8 t a = 25 c 3.5 i d continuous drain current t a = 100 c 2 a t a = 25 c 2 p d maximum power dissipation t a = 100 c 0.8 w r q ja thermal resistance - junction to ambient 62.5 c /w notes : * current limited by bond wire.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 3 a p m 3 0 5 5 n g e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 3055ng symbol parameter test condition min. typ. max. unit static bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 30 v v ds = 24 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 1 1.5 2 v i gss gate leakage current v gs = 20 v, v ds =0v 100 na v gs = 10 v, i ds =12a 75 100 r ds(on) a drain - source on - state resistance v gs = 4.5 v, i ds = 6 a 100 200 m w diode v sd a diode forward voltage i sd = 3 a, v gs =0v 0.8 1.3 v t rr reverse reco very time 20 ns q rr reverse recovery charge i d s =12a, dl sd /dt = 100a/ m s 11 nc dynamic b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 2.2 w c iss input capacitance 390 c oss output capacitance 65 c rss reverse tra nsfer capacitance v gs =0v, v ds =15v, f requency =1.0mhz 35 pf t d(on) turn - on delay time 3 6 t r turn - on rise time 10 19 t d(off) turn - off delay time 15 28 t f turn - off fall time v dd =1 5 v, r l =1 5 w , i d s = 1 a, v gen = 10v , r g =6 w 2 5 ns gate charge b q g total gate charge 7.7 11 q gs gate - source charge 1.7 q gd gate - drain charge v ds =1 5 v, v gs = 10 v, i d s =12a 1.1 nc notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 4 a p m 3 0 5 5 n g t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 t c =25 o c 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 t c =25 o c,v g =10v 1e-4 1e-3 0.01 0.1 1 10 60 0.05 0.1 1 2 mounted on 1in 2 pad r q ja : 45 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0.1 1 10 100 0.1 1 10 100 300 m s rds(on) limit 1s t c =25 o c 100ms dc 1ms
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 5 a p m 3 0 5 5 n g r ds(on) - on - resistance ( m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance ( m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 3 4 5 6 7 8 9 10 50 60 70 80 90 100 110 120 130 140 150 i d =12a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 4v 3v v gs =5,6,7,8,9,10v 0 2 4 6 8 10 12 20 40 60 80 100 120 140 160 v gs = 4.5v v gs =10v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 6 a p m 3 0 5 5 n g v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 75m w v gs = 10v i ds = 12a 0 5 10 15 20 25 30 0 50 100 150 200 250 300 350 400 450 500 550 frequency=1mhz crss coss ciss 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 v ds = 15v i d = 12a 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 20 t j =25 o c t j =150 o c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 7 a p m 3 0 5 5 n g p a c k a g i n g i n f o r m a t i o n t o - 2 6 3 ( r e f e r e n c e j e d e c r e g i s t r a t i o n t o - 2 6 3 ) millimeters inches dim min. max. min. max. a 4.06 4.83 0.160 0.190 a1 0.00 0.25 0.000 0.010 b 0.51 0.99 0.020 0.039 b2 1.14 1.78 0.045 0.070 c 0.38 0.74 0.015 0.029 c2 1.14 1.65 0.045 0.065 d 8.38 9.65 0.330 0.380 d1 6.86 - 0.270 - e 9.65 11.43 0.380 0.450 e1 6.22 - 0.245 - e 2.54 bsc 0.100 bsc l 1.78 2.79 0.070 0.110 l1 - 1.68 - 0.066 l2 - 1.78 - 0.070 c 0 8 0 8 b2 e l view a 0 0 . 2 5 gauge plane a 1 seating plane see view a e h d l 1 a c2 b c l 2 e1 d 1
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 8 a p m 3 0 5 5 n g c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 a j b t2 t1 c c o v e r t a p e d i m e n s i o n s application a b c j t1 t2 w p e 380 3 80 2 13 0. 5 2 0.5 24 4 2 0.3 24 + 0.3 - 0.1 16 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to - 263 11.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 10.8 0.1 16.1 0.1 5.2 0.1 0.35 0.013 (mm) application carrier width cover tape width devices per reel to - 263 24 21.3 800
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 9 a p m 3 0 5 5 n g terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i n r e f l o w p r o f i l e s p h y s i c a l s p e c i f i c a t i o n s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/se cond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - o c t . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 0 a p m 3 0 5 5 n g test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles r e l i a b i l i t y t e s t p r o g r a m table 1. snpb entectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. c l a s s i f i c a t i n r e f l o w p r o f i l e s ( c o n t . ) c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369
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